ICCCAS 2024 Invited Speaker

Hitoshi Aoki (SMIEEE)

Rohm Semiconductor, Japan

Biography: Dr. Hitoshi Aoki is a technical adviser at Rohm Co. Itd. Previously, he was a full time professor at Teikyo Heisei University and visiting professor at Gunma University in Japan. He has over 35 years of device modeling experience in electronic industries. Prior to his carrier with Universities, Dr. Aoki founded a modeling company, MoDeCH Inc. in 2002, where he is now an Executive Advisor. He had been working at some leading companies of electronics in both the U.S.A. and Japan including the ULSI Research Laboratory of Hewlett-Packard Laboratories U.S.A, Agilent Technology, and Hewlett-Packard Japan. He received the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2002. He authored and coauthored two books related to compact modeling and more than 130 technical papers. Dr. Aoki is a senior member of IEEE.
Speech Title: Drain and Gate Leakage Currents Characterization in GaN HEMTs

Abstract: GaN based high electron mobility transistors (HEMTs) have been widely developed in high frequency and power integrated circuits. For electrical design automations, the compact model of GaN HEMTs is the key for fast and accurate circuit simulations. In this research, accurate off-leakage current model of the gate and drain channels has been developed. Although popular compact models of GaN HEMTs including ASM-HEMT and MVSG models support the leakage currents, drain voltage dependencies are very limited, therefore, they cannot treat both linear and saturation regions.
Gate-induced drain leakage (GIDL) is the band-to-band tunneling leakage at off-state, which strongly depends on the drain voltage. Due to high drain-to-gate voltage, an inversion layer is formed in two-dimensional electron gas (2DEG) region and high electric field leads to band-to-band tunneling which includes Poole-Frenkel emission (PFE) and Fowler-Nordheim tunneling (FNT). A unified off-leakage model which reflects the impact of PFE and FNT has been successfully developed and verified with DC and S-parameter measurements.