ICCCAS Invited Speaker

Satoshi Tanaka (SMIEEE)

Hiroshima University, Japan

Biography: Satoshi Tanaka received the B.S. and M.S. degrees in Electrical Engineering from Waseda University, Tokyo, Japan, in 1983 and 1985, respectively, and the Ph.D. degree in Communication Engineering from Tohoku University, Miyagi, Japan, in 2019. In 1985, he joined the Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan, where he engaged in the research and development of mixed analog and digital bipolar CMOS, GaAs, and Bi-CMOS RFICs for pager, PHS, GSM, and W-CDMA applications. From 1995 to 1996, he was a Visiting Scholar at the Integrated Circuits and Systems Laboratory, University of California, Los Angeles (UCLA), USA, where he conducted research on RF CMOS circuits for WLAN applications. In 2006, he joined Renesas Technology Co., Tokyo, Japan, where he developed power amplifiers for mobile phones using LDMOS and HBT technologies. In 2012, he joined Murata Manufacturing Co., Ltd., Kyoto, Japan, and developed RF front-end modules, particularly multiband, multimode power amplifier (PA) modules for GSM, W-CDMA, LTE, and 5G systems. Since 2022, he has been a Special Appointed Professor at Hiroshima University, Higashi-Hiroshima, Japan. His current research interests include Sub-THz RF circuits and their applications. Dr. Tanaka served as a Technical Committee Member of the IEEE International Solid-State Circuits Conference (ISSCC) from 2005 to 2009. From 2009 to 2018, he served as the RF Program Committee Chair of the IEEE Asian Solid-State Circuits Conference (A-SSCC). In 2015, he was the Chair of the Technical Committee on Circuits and Systems (CAS) of the Institute of Electronics, Information and Communication Engineers (IEICE). He is a Fellow of IEICE and a Senior Member of IEEE.
Speech Information