ICCCAS Invited Speaker

Satoshi Tanaka (SMIEEE)

Hiroshima University, Japan

Biography: Satoshi Tanaka received the B.S. and M.S. degrees in electrical engineering from Waseda University, Tokyo, Japan, in 1983 and 1985, respectively, and the Ph.D. degree in communication engineering from Tohoku University, Miyagi, Japan, in 2019. In 1985, he joined the Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan, where he was engaged in the research and development of mixed analog and digital bipolar CMOS, GaAs and Bi-CMOS RFICs for pager, PHS, GSM and W-CDMA applications. From 1995 to 1996, he joined Integrated Circuits and Systems Lab., University of California, Los Angeles, US, as a visiting scholar where he worked for research on RF CMOS circuit for WLAN applications. In 2006, he moved to Renesas Technology Co., Tokyo, Japan, and developed a power amplifier for mobile phones using LDMOS and HBT. In 2012, he joined Murata Manufacturing Co., Ltd., Kyoto, Japan. He developed RF front-end modules, especially multiband multimode PA modules for GSM/W-CDMA/LTE/5G. In 2022, he joined Hiroshima University, Higashi-Hiroshima, Japan as a Special Appointed Professor. His current research interests include Sub-THz RF circuits and its applications. Dr. Tanaka was a Technical Committee Member of the IEEE International Conference on Solid-State Circuits (ISSCC) from 2005 to 2009. From 2009 to 2018, he was an RF program committee chair of the IEEE Asian Conference on Solid-State Circuits (A-SSCC). In 2015, he was Chair of the Technical Committee on Circuits and Systems (CAS) of the IEICE. He is a fellow of IEICE and senior member of IEEE.