ICCCAS Invited Speaker

Yoshiaki Daimon Hagiwara (FIEEE)

Sojo University, Japan

Biography: Hagiwara graduated California Institute of technology (Caltech) in Pasadena, California in USA with BS71 with honor, MS1972 and PhD1975 with the major in Electric Engineering and with the minor in Physics. In February1975, he joined Sony in Tokyo, Japan and was engaged first in the early development of Sony image sensors. While working for Sony from 1975 to 2008, he was engaged in the early developments of image sensor and the digital camera chip set including the ADC, DRAM and high-speed Cache SRAM buffer memory chips and micro controller chips. Before retiring from Sony at the end of July 2008, he was engaged in the PS2 and PS3 chip set developments. He was invited to talk at CCD1979, ECS1980, ESSCIRC2001, ESSCIRC2008 and ISSCC2013. While working at Sony until July 2008, he was serving as a visiting professor at Caltech since 1998 to 1999 in the office of Prof. C. A. Mead in Electrical Engineering department and also in the offices of Prof. T.C. McGill and Prof. James McCaldin in Applied Physics department. He was also serving as a visiting professor since 2003 till 2006 in the office of Prof. Haruo Kobayashi in Electrical Engineering department at Gunma University in Japan.
In 1992 he also served as a member of JEDEC memory standardization committee and also as the IEC TC47　technical committee chair of the international standard committee (IEC). He also served as the international program chair and an operational committee member in IEEE EDS sponsored ICMTS conferences, IEEE ISSCC conferences for which he served as the ISSCC Asian Committee chair and also as the ISSCC international technical program committee (ITC) chair in series. He was also a member in the program committee (PC) and the operational committee (OC) and is now serving in the advisory committee (AC) of the IEEE Cool Chips conferences in series. He also taught from 2020 to 2021 the AIPS, Artificial Intelligent Partner System for AI robotics at Kanagawa Institute of Technology in Japan.
In 2008 he founded and worked as the president of Artificial Intelligent Partner System, AIPS, a nonprofit research organization, NPO, registered by Kanagawa prefecture government in Japan. Since 2017, he is serving as an operational committee (OC) member and also as a technical program committee (PC) member of Department of Education in Society of Semiconductor Industry Specialists (SSIS) in Japan. Since 2009 till 2017, he taught graduate and undergraduate students as a full professor of Information and Communication Science department and is still now serving as a specially appointed professor at the president office in Sojo University in Kumamoto-city, Japan working for developments of semiconductor chips for AIPS robotics and Solar Cell energy solutions. He is Caltech Distinguished Alumni, IEEE Life Fellow and AAIA Fellow.
Speech Title: Past, Presence and Future Applications of Buried-channel Double-junction Sony Hole Accumulation Diode (HAD) type Image Sensors and Solar Cells with Pinned Surface and Empty Potential Well
Abstract: Historically, the original bipolar-transistor-like PNP double junction buried-channel photodiode was invented and filed by Philips as a Netherland patent application on June 9, 1975. However, the surface region in each pixel was connected only to the high resistivity substrate in the backside with some undesired RC delay time constant. And in the original vertical anti-blooming overflow-drain (VOD) structure invented by Fairchild in 1972, the excess photo charge is drained vertical to the image-sensor surface. Subsequently on October 23, 1975, Hagiwara at Sony filed a Japanese patent application to improve the performance of the double and triple junction type buried-photodiodes with the pinned surface and the zero RC delay time constant, simply by connecting the surface region directly to the external metal wiring in each pixel with zero resistance on the surface while the excess photo charge is drained into the backside in the Sony VOD structure. This simple improvements made a big difference in the history of high-frequency dynamic operations and anti-blooming VOD capbility of high-performance image sensors, and realized the electronic and global shutter capability with completely mechanical-part free and image-lag free features in our digital TV era. SONY introduced a passport size video camera in the market in 1987 and named this unique high-performance photodiode, originally invented in 1975 by Hagiwara at SONY, as Hole Accumulation Diode (HAD). In this paper, it is explained that even in solar cell applications, this zero-resistance-surface Sony HAD sensor feature is very important even in solar cell applications and also that, by incorporating a simple circuit of switching-gates, this SONY HAD sensor structure can be used, not only as a high-performance image sensor but also, as a high-efficiency solar cell for powering AI robot systems and mobile electrical-car applications. In this paper, it is also explained in details that a high-energy ion-implantation technology is a must to realize high- performance semiconductor devices, not only analog and digital LSI chips but also image sensors historically, and now specially for the future high-performance solar cells.