ICCCAS Invited Speaker

You Yin (SMIEEE)

Gunma University, Japan

Biography: You Yin received the B.S. and M.S. degrees in materials from Dalian University of Technology, China, in 1997 and 2000, respectively, and the Ph.D. degree in electrical engineering from Shanghai Jiao Tong University, China, in 2003. He joined Gunma University in July, 2003 and he has been a professor in the Division of Electronics and Informatics, Gunma University since October, 2021. His current research interests are micro/nano-electronic devices and systems for future's IoT & AI and renewable energy: artificial synapses, nonvolatile memories, quantum dot solar cells; nano-fabrication: electron beam lithography, self assembly; nano-metrology technology: scanning probe microscopy, atomic force microscopy, scanning tunneling microscopy. He has published more than 120 journal papers, and more than 200 international conference papers. He is a Senior Member of IEEE.
Speech Title: Characterization of Doped Sb3Te and its Application to Phase-change Device
Abstract: Phase-change device is based on rapid reversible phase-transformation between amorphous and crystalline phases of chalcogenide. It is widely regarded as the next-generation nonvolatile memory as well as the promising artificial synapse. It is of great importance to improve the properties of chalcogenide because they often have a decidedly influence on the device performance. Conventional chalcogenides such as Sb2Te3, Ge2Sb2Te5 have low crystallization temperatures and thus short retention time at high temperatures. As a result, this may strictly limit the usage circumstance only to a relatively low temperature. We systematically investigated Sb3Te-based chalcogenides to obtain high-crystallization temperature by doping into Sb3Te and thus to improve the thermal stability of phase-change device. In this talk, we report characterization of doped Sb3Te and its application to phase-change devi